TABLE 1E: FRED
Date Code
#
Part Number
or
Voltage
Temp.
Time
Sample
Failures
Device Hours
Remark
Test #
[V]
[°C]
[hrs]
Size
[hrs]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
DHF30IM600PN
DHF30IM600QB
DHG10I1200PM
DHG10I600PM
DHG20C600QB
DHG30I1200HA
DHG30I1200HA
DHG40C1200HB
DHG40C600PB
DHG60C600HB
DPG15I400PM
DPG20C200PN
DPG20C400PN
DPG30C300HB
DPG30C300PB
DPG60C200QB
DPG60C300HB
DPG60C300QB
DPG60C400QB
DPG60IM300PC
DSEC60-02Aq
DSEI2x31-06C
DSEI2x61-12B
DSEP15-06A
DSEP29-03
DSEP29-06A
DSEP2x61-12A
DSEP30-06BR
DSEP30-12AR
DSEP60-03A
DSEP60-06A
DSEP75-06AR
DSEP8-03AS
MEO450-12
MEO500-06DA
1508
1625
1682
1685
1711
1652
1734
1903
2037
1668
1770
1692
1768
1644
1923
1608
1525
1481
1446
1643
1929
1563
1607
2020
1954
1736
1984
1952
1634
1537
1572
1619
1738
1826
1934
480
480
960
480
480
960
960
960
480
480
320
240
320
240
240
160
240
240
320
240
160
480
960
480
240
480
960
480
960
240
480
480
240
960
480
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
168
168
168
168
168
168
168
168
168
168
1000
1000
186
168
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
20
20
20
10
20
20
20
20
20
20
6
9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
3360
1680
1680
3360
3360
3360
1680
3360
3360
3360
3360
20000
20000
1116
1512
TABLE 1F: Schottky Diode
Date Code
#
Part Number
or
Voltage
Temp.
Time
Sample
Failures
Device Hours
Remark
Test #
[V]
[°C]
[hrs]
Size
[hrs]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DSA120C150QB
DSA120C150QB
DSA30C100HB
DSA30C100PN
DSA30C45HB
DSA60C100PB
DSA70C100HB
DSA90C200HB
DSB10I45PM
DSB15IM45IB
DSB30C30PB
DSB30C45PB
DSB30C60PB
DSB40C15PB
DSS10-0045B
DSS20-0015B
DSS20-01AC
DSS2x41-01A
DSS2x41-01A
DSS6-015AS
DSS6-015AS
DSSK38-0025B
DSSK60-015A
DSSK60-015AR
1507
1907
1981
1906
1714
1781
1782
1674
1942
1622
1718
1783
1672
1673
2019
1871
1709
1467
2039
1723
1838
1982
1600
1857
150
150
100
100
45
100
100
200
45
36
24
36
60
12
36
12
100
100
100
150
150
20
150
150
125
125
125
125
125
125
125
125
100
100
100
100
125
100
100
100
125
125
125
150
150
100
125
125
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
168
168
1000
1000
168
168
168
20
20
20
20
20
16
20
20
20
20
20
20
20
20
20
20
20
10
10
77
77
20
20
20
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
20000
20000
20000
20000
20000
16000
20000
20000
20000
20000
20000
20000
20000
20000
3360
20000
20000
1680
1680
77000
77000
3360
3360
3360
IXYS Semiconductor GmbH
9
相关PDF资料
IXTQ40N50Q MOSFET N-CH 500V 40A TO-3P
IXTQ42N25P MOSFET N-CH 250V 42A TO-3P
IXTQ44N50P MOSFET N-CH 500V 44A TO-3P
IXTQ460P2 MOSFET N-CH 500V 24A TO3P
IXTQ470P2 MOSFET N-CH 500V 42A TO3P
IXTQ480P2 MOSFET N-CH 500V 52A TO3P
IXTQ50N20P MOSFET N-CH 200V 50A TO-3P
IXTQ50N25T MOSFET N-CH 250V 50A TO-3P
相关代理商/技术参数
IXTQ30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N20T 功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N30P 功能描述:MOSFET 36 Amps 300V 0.11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N50P 功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube